The focus of the 2012 workshop was on:
- Modeling, characterization and optimization of masks foroptical and EUV lithography
- Requirements and use cases for future lithography simulation infrastructure
- Lithographic techniques for the fabrication of micro- and nanooptical components
Thursday, September 20
| 06:00 p.m. | Welcome reception |
| 08:00–08:30 p.m. |
Welcome and introduction
A. Erdmann (Fraunhofer IISB) |
| 08:30–09:15 p.m. |
Computational lithography for EverMoore
V. Singh (Director Computational Lithography, Intel Corporation, USA) |
Friday, September 21
| 09:00–09:25 a.m. |
How to model imaging in EUV lithography
P. Gräupner (Carl Zeiss SMT) |
| 09:25–09:50 a.m. |
Efficient simulation of EUV multilayer defects with a rigorous data base approach
P. Evanschitzky (IISB) |
| 09:50–10:15 a.m. |
Resist properties required for 6.67 nm extreme ultraviolet lithography
T. Kozawa1 and A. Erdmann2 (1Osaka University, Japan; 2IISB) |
| 10:15–10:45 a.m. | Coffee break |
| 10:45–11:10 a.m. |
New design methods for high-quality optical systems
F. Bociort (TU Delft, Netherlands) |
| 11:10–11:35 a.m. |
Feature type dependent contrast limits of Focus Drilling for DoF enhancement in HR lithography
C. Kohler and J. van Schaik (ASML, Netherlands) |
| 11:35–12:00 a.m. |
SMARTER microscopy: sparsity mediated algorithmic reconstruction technique for enhanced resolution
A. Szameit1, Y. Shechtman1, E. Osherovich2, E. Bullkich1, P. Sidorenko1, H. Dana2, S. Steiner1, E.-B. Kley1, S. Gazit1, S. Shoham2, M. Zibulevsky2, I. Yavneh2, Y. C. Eldar2, O. Cohen2, and M. Segev1 (1University of Jena; 2Technion Haifa, Israel) |
| 12:00–01:30 p.m. | Lunch |
| 01:30–01:55 p.m. |
Challenges for e-Beam direct write proximity effect correction at the 28nm node
C. Hohle, K.H. Choi, M. Freitag, M. Gutsch, K. Steidel, and X. Thrun (Fraunhofer CNT) |
| 01:55–02:20 p.m. |
Enhanced model calibration for e-beam lithography: from pattern selection to parameter optimization
P. Schiavone1, T. Figueiro1, M. Saib1, J.H. Tortai2, K. H. Choi3, C. Hohle3 (1Aselta Nanographics, France; 2CNRS LTM France; 3Fraunhofer CNT) |
| 02:20–02:50 p.m. | Coffee break |
| 02:50–03:15 p.m. |
Computer simulation of directed self assembly, equilibrium and kinetics,
U. Welling, C. Daoulas, and M. Müller (University of Göttingen) |
| 03:15–03:40 p.m. |
Kinetics of volume hologram formation in epoxy based photopolymers
T. Sabel (TU Berlin) |
| 04:00 p.m. | Special event and dinner |
Saturday, September 22
| 09:00–09:25 a.m. |
Numerical calculation of LER scatter signatures in the presence of side-wall angle and roundings
K. Frenner, B. Bilski, and W. Osten (TU Stuttgart) |
| 09:25–09:50 a.m. |
Research on in situ aberration measurement of lithographic projection lenses
X. Wang, S. Li, L. Duan, J. Yang, and G. Yan (SIOM, China) |
| 09:50–10:15 a.m. |
White light Fourier scatterometry for sub-wavelength metrology
V. Ferreras Paz, S. Peterhänsel, K. Frenner, and W. Osten (TU Stuttgart) |
| 10:15–10:45 a.m. | Coffee break |
| 10:45–11:10 a.m. |
Recent progress in fast rigorous electromagnetic modeling by the Generalized Source Method and perspectives for optical lithography
A. Tishchenko (CNRS UMR, France) |
| 11:10–11:35 a.m. |
Application of an artificial neural network to a compact mask model optimization
V. Agudelo-Moreno (IISB) |
| 11:35–12:00 a.m. |
Rigorous real-time simulation of topographic mask effects
J. Pomplun1, J. Tyminski2, L. Zschiedrich1, S. Burger1, and F. Schmidt1 (1JCMwave GmbH; 2Nikon Research Corporation of America, USA) |
| 12:00 | Final discussion and concluding remarks |
| 12:30 p.m. | Lunch |
Organizational information:
E-Mail: lithography@iisb.fraunhofer.deTelephone: +49 9131 761 211
Address of the Institute:
Fraunhofer Institute of Integrated Systems and Device Technology
Schottkystr. 10
91058 Erlangen, Germany